VAPOR GROWTH OF INAS

被引：27

作者：

MIZUNO, O ^{[1
]}

WATANABE, H ^{[1
]}

SHINODA, D ^{[1
]}

机构：

[1] NIPPON ELECT CO LTD,CENT RES LABS,KAWASAKI,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1975年 / 14卷 / 02期

关键词：

D O I：

10.1143/JJAP.14.184

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：184 / 191

页数：8

共 29 条

[1] ORIENTATION DEPENDENCE OF EPITAXIAL INASXP(1-X) ON GAAS [J].

ALLEN, HA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (11) :1417-&

[2] DEPOSITION OF EPITAXIAL INASXP(1-X) ON GAAS AND GAP SUBSTRATES [J].

ALLEN, HA ;

MEHAL, EW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (08) :1081-&

[3] METHOD FOR PRODUCING GRADED COMPOSITION EPITAXIAL LAYERS BY VAPOR DEPOSITION [J].

BAILEY, LG ;

ROGERS, GG .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (05) :834-&

[4]

Brooks H., 1955, ADVAN ELECTRON ELECT, V7, P158

[5]

CAIRNS B, 1968, J ELECTROCHEM SOC, V115, pC327

[6] PREPARATION OF EPITAXIAL GAXIN1-XAS [J].

CONRAD, RW ;

HOYT, PL ;

MARTIN, DD .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (2P1) :164-&

[7] EPITAXIAL INAS ON INAS SUBSTRATES [J].

CRONIN, GR ;

BORRELLO, SR .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (10) :1078-&

[8] EPITAXIAL INAS ON SEMI-INSULATING GAAS SUBSTRATES [J].

CRONIN, GR ;

CONRAD, RW ;

BORELLO, SR .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (12) :1336-&

[9] VAPOR GROWTH OF EPITAXIAL GAAS - SUMMARY OF PARAMETERS WHICH INFLUENCE PURITY AND MORPHOLOGY OF EPITAXIAL LAYERS [J].

DILORENZO, JV .

JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) :189-+

[10] EFFECTS OF ASCL3 MOLE FRACTION ON INCORPORATION OF GERMANIUM, SILICON, SELENIUM, AND SULFUR INTO VAPOR GROWN EPITAXIAL LAYERS OF GAAS [J].

DILORENZO, JV ;

MOORE, GE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (11) :1823-+

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