EXPERIMENTS ON ORIGIN OF PROCESS-INDUCED RECOMBINATION CENTERS IN SILICON

被引：79
作者：
SAH, CT
WANG, CT
机构：
[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
[2] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
来源：
JOURNAL OF APPLIED PHYSICS | 1975年 / 46卷 / 04期
关键词：
D O I：
10.1063/1.321758
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1767 / 1776
页数：10
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