0.67 MU-M ROOM-TEMPERATURE OPERATION OF GAINASP ALGAAS LASERS ON GAAS PREPARED BY LPE

被引：8

作者：

KISHINO, K

KOIZUMI, Y

YOKOCHI, A

KINOSHITA, S

TAKO, T

机构：

[1] TOKYO INST TECHNOL,PRECIS MACHINARY & ELECTR RES LAB,MIDORI KU,YOKOHAMA,KANAGAWA 227,JAPAN

[2] SCI UNIV TOKYO,DEPT PHYS,NODA,CHIBA 278,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 09期

关键词：

D O I：

10.1143/JJAP.23.L740

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L740 / L742

页数：3

共 50 条

[1] 0. 67 mu m ROOM-TEMPERATURE OPERATION OF GaInAsP/AlGaAs LASERS ON GaAs PREPARED BY LPE.
Kishino, Katsumi
Koizumi, Yoshihiro
Yokochi, Akira
Kinoshita, Susumu
Tako, Toshiharu
Japanese Journal of Applied Physics, Part 2: Letters, 1984, 23 (9 pt 2): : 740 - 742
[2] 1.3 MU-M CW OPERATION OF GAINASP/INP DH DIODE-LASERS AT ROOM-TEMPERATURE
OE, K
ANDO, S
SUGIYAMA, K
JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (07) : 1273 - 1274
[3] FABRICATION AND LASING CHARACTERISTICS OF 0.67 MU-M GAINASP/ALGAAS VISIBLE LASERS PREPARED BY LIQUID-PHASE EPITAXY ON (100) GAAS SUBSTRATES
KISHINO, K
HARADA, A
KANEKO, Y
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1987, 23 (02) : 180 - 187
[4] CW OPERATION OF 0.67-MU-M GAINASP/ALGAAS LASER AT 208-K GROWN ON GAAS SUBSTRATES BY LPE
KISHINO, K
KANEKO, Y
HARADA, A
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (05): : L358 - L360
[5] ROOM-TEMPERATURE CW OPERATION OF GAINASP-INP DH LASER EMITTING AT 1.51 MU-M
ARAI, S
ASADA, M
SUEMATSU, Y
ITAYA, Y
JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (12) : 2333 - 2334
[6] NEW SEMICONDUCTOR INJECTION-LASERS FOR CW, ROOM-TEMPERATURE OPERATION AT 1 MU-M WAVELENGTHS
NAHORY, RE
POLLACK, MA
DIXON, RW
OPTICS COMMUNICATIONS, 1976, 18 (01) : 37 - 38
[7] 1.5 MU-M ROOM-TEMPERATURE PULSED OPERATION OF GAINASP-INP DOUBLE HETEROSTRUCTURE GROWN BY LP MOCVD
RAZEGHI, M
HIRTZ, P
LARIVAIN, JP
BLONDEAU, R
DECREMOUX, B
DUCHEMIN, JP
ELECTRONICS LETTERS, 1981, 17 (18) : 643 - 642
[8] ROOM-TEMPERATURE OPERATION OF INGAASSB/ALGASB DOUBLE HETEROSTRUCTURE LASERS NEAR 2.2 MU-M PREPARED BY MOLECULAR-BEAM EPITAXY
CHIU, TH
TSANG, WT
DITZENBERGER, JA
VANDERZIEL, JP
APPLIED PHYSICS LETTERS, 1986, 49 (17) : 1051 - 1052
[9] ROOM-TEMPERATURE CONTINUOUS WAVE OPERATION OF 671-NM WAVELENGTH GAINASP/ALGAAS VSIS LASERS
CHONG, TH
KISHINO, K
IEEE PHOTONICS TECHNOLOGY LETTERS, 1990, 2 (02) : 91 - 93
[10] BISTABLE OPERATION OF 0.8-MU-M GAINASP/GAAS LASERS
ISHIKAWA, J
ITO, T
TAKAHASHI, NS
KURITA, S
ELECTRONICS LETTERS, 1988, 24 (16) : 1014 - 1016

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