MECHANISM FOR ION-INDUCED MIXING OF GAAS-ALGAAS INTERFACES BY RAPID THERMAL ANNEALING

被引：18

作者：

KAHEN, KB

RAJESWARAN, G

LEE, ST

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 17期

关键词：

D O I：

10.1063/1.99935

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1635 / 1637

页数：3

共 15 条

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[5]

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[6]

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[7]

Lee S. A., UNPUB

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[9] KINETICS OF SILICON-INDUCED MIXING OF ALAS-GAAS SUPERLATTICES [J].

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HARBISON, JP .

APPLIED PHYSICS LETTERS, 1987, 50 (25) :1823-1825

[10] ANNEALING AND ARSENIC OVERPRESSURE EXPERIMENTS ON DEFECTS IN GALLIUM ARSENIDE [J].

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