VARIATION OF DRIFT VELOCITY WITH FIELD IN GAAS

被引：24
作者：
CONWELL, EM
VASSELL, MO
机构：
来源：
APPLIED PHYSICS LETTERS | 1966年 / 9卷 / 11期
关键词：
D O I：
10.1063/1.1754633
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：411 / +
页数：1
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共 15 条
[1]   INTERVALLEY TRANSFER OF HOT ELECTRONS IN GALLIUM ARSENIDE [J].
BUTCHER, PN ;
FAWCETT, W .
PHYSICS LETTERS, 1965, 17 (03) :216-&
[2]   INTERVALLEY TRANSFER MECHANISM OF NEGATIVE RESISTIVITY IN BULK SEMICONDUCTORS [J].
BUTCHER, PN ;
FAWCETT, W .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1965, 86 (554P) :1205-&
[3]   INFRARED RADIATION FROM BULK GAAS - (DC PULSE EXCITATION - 9000 A - E) [J].
CHANG, KKN ;
LIU, SG ;
PRAGER, HJ .
APPLIED PHYSICS LETTERS, 1966, 8 (08) :196-&
[4]   FIELD DEPENDENCE OF MOBILITY IN (100) CONDUCTION BAND MINIMA OF GAAS [J].
CONWELL, EM .
PHYSICS LETTERS, 1966, 21 (04) :368-+
[5]   HIGH-FIELD DISTRIBUTION FUNCTION IN GAAS [J].
CONWELL, EM ;
VASSELL, MO .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :22-+
[6]   SWITCHING AND LOW-FIELD BREAKDOWN IN N-GAAS BULK DIODES [J].
COPELAND, JA .
APPLIED PHYSICS LETTERS, 1966, 9 (04) :140-+
[7]  
COPELAND JA, TO BE PUBLISHED
[8]   BAND STRUCTURE AND ELECTRON TRANSPORT OF GAAS [J].
EHRENREICH, H .
PHYSICAL REVIEW, 1960, 120 (06) :1951-1963
[9]   ELECTRON SCATTERING MECHANISMS IN N-TYPE EPITAXIAL CAP [J].
EPSTEIN, AS .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (10) :1611-&
[10]   INSTABILITIES OF CURRENT IN 3-V SEMICONDUCTORS [J].
GUNN, JB .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (02) :141-&
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