LOW-TEMPERATURE FORMATION OF INSULATING LAYERS ON SILICIDES BY ANODIC-OXIDATION

被引:4
作者
STRYDOM, WJ
LOMBAARD, JC
PRETORIUS, R
机构
[1] CSIR,NATL ACCELERATOR CTR,VAN DE GRAAFF GRP,DIV ION SOLID INTERACT,FAURE 7131,SOUTH AFRICA
[2] UNIV STELLENBOSCH,DEPT PHYS,DIV SOLID STATE,STELLENBOSCH 7600,SOUTH AFRICA
关键词
Acknowledgements-We would like to expresso ur appre-ciationt o Dr D. T. Thompson; M anager; N ew Technology DepartmentJ; o hnson-Matthey ResearchC entre; Reading and Mr J. P. Smith; Johnson-Matthey; W adeville; f or the platinum and palladium used in this investigation.T he Foundation for Research and Development (Micro-electronicso) f the CSIR is also thankedf or their financial support;
D O I
10.1016/0038-1101(87)90131-6
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
16
引用
收藏
页码:947 / 951
页数:5
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