INTERFACE TRAP GENERATION IN SILICON DIOXIDE WHEN ELECTRONS ARE CAPTURED BY TRAPPED HOLES

被引：394
作者：
LAI, SK [1 ]
机构：
[1] IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
来源：
JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 05期
关键词：
D O I：
10.1063/1.332323
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：2540 / 2546
页数：7
相关论文
共 40 条
[1]   RADIATION-INDUCED TRAPPING CENTERS IN THIN SILICON DIOXIDE FILMS [J].
AITKEN, JM .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 40 (1-3) :31-47
[2]   ELECTRON TRAPPING BY RADIATION-INDUCED CHARGE IN MOS DEVICES [J].
AITKEN, JM ;
YOUNG, DR .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (03) :1196-1198
[3]   AVALANCHE INJECTION OF HOLES INTO SIO2 [J].
AITKEN, JM ;
YOUNG, DR .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1977, 24 (06) :2128-2134
[4]   ELECTRON TRAPPING IN ELECTRON-BEAM IRRADIATED SIO2 [J].
AITKEN, JM ;
YOUNG, DR ;
PAN, K .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) :3386-3391
[5]   FREQUENCY AND TEMPERATURE TESTS FOR LATERAL NONUNIFORMITIES IN MIS CAPACITORS [J].
CHANG, CC ;
JOHNSON, WC .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (10) :1249-1255
[6]  
DECLERCK G, 1974, J APPL PHYS, V45, P2593, DOI 10.1063/1.1663634
[7]   PROCESS OPTIMIZATION OF RADIATION-HARDENED CMOS INTEGRATED-CIRCUITS [J].
DERBENWICK, GF ;
GREGORY, BL .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) :2151-2156
[8]   LOCATION OF POSITIVE CHARGES IN SIO2-FILMS ON SI GENERATED BY VUV PHOTONS, X-RAYS, AND HIGH-FIELD STRESSING [J].
DIMARIA, DJ ;
WEINBERG, ZA ;
AITKEN, JM .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) :898-906
[9]   VISCOUS-FLOW OF THERMAL SIO2 [J].
EERNISSE, EP .
APPLIED PHYSICS LETTERS, 1977, 30 (06) :290-293
[10]   VISCOUS SHEAR-FLOW MODEL FOR MOS DEVICE RADIATION SENSITIVITY [J].
EERNISSE, EP ;
DERBENWICK, GF .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) :1534-1539
1234