SHORT-CHANNEL EFFECTS IN SOI MOSFETS

被引：198

作者：

VEERARAGHAVAN, S ^{[1
]}

FOSSUM, JG ^{[1
]}

机构：

[1] UNIV FLORIDA,DEPT ELECT ENGN,GAINESVILLE,FL 32611

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 03期

关键词：

D O I：

10.1109/16.19963

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：522 / 528

页数：7

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