OPTICAL-PROPERTIES OF ZNSE DOPED WITH AG AND AU

被引:78
作者
DEAN, PJ [1 ]
FITZPATRICK, BJ [1 ]
BHARGAVA, RN [1 ]
机构
[1] PHILIPS LABS, BRIARCLIFF MANOR, NY 10510 USA
关键词
D O I
10.1103/PhysRevB.26.2016
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:2016 / 2035
页数:20
相关论文
共 69 条
[1]  
Allen J. W., 1973, Journal of Luminescence, V7, P228, DOI 10.1016/0022-2313(73)90069-0
[2]   CORE EFFECTS ON BOUND-EXCITON-NEUTRAL-IMPURITY COMPLEXES WITH PARTICULAR REFERENCE TO TRANSITION-METAL IMPURITIES [J].
ALLEN, JW ;
DEAN, PJ ;
WHITE, AM .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1976, 9 (05) :L113-L116
[3]   INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS [J].
ASHEN, DJ ;
DEAN, PJ ;
HURLE, DTJ ;
MULLIN, JB ;
WHITE, AM .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (10) :1041-1053
[4]   LUMINESCENCE IN HIGHLY CONDUCTIVE N-TYPE ZNSE [J].
BOULEY, JC ;
BLANCONNIER, P ;
HERMAN, A ;
GED, P ;
HENOC, P ;
NOBLANC, JP .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (08) :3549-3555
[5]   PHOTOCONDUCTIVITY OF ZINC SELENIDE CRYSTALS AND A CORRELATION OF DONOR AND ACCEPTOR LEVELS IN II-VI-PHOTOCONDUCTORS [J].
BUBE, RH ;
LIND, EL .
PHYSICAL REVIEW, 1958, 110 (05) :1040-1049
[6]   EXCITED-STATES OF EXCITONS BOUND TO NITROGEN PAIRS IN GAP [J].
COHEN, E ;
STURGE, MD .
PHYSICAL REVIEW B, 1977, 15 (02) :1039-1051
[7]   ISOELECTRONIC TRAP IODINE IN AGBR [J].
CZAJA, W ;
BALDERESCHI, A .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (02) :405-424
[8]  
Dean P. J., 1979, Excitons, P55, DOI 10.1007/978-3-642-81368-9_3
[9]  
Dean P. J., 1973, PROGR SOLID STATE CH, V8, P1
[10]   ISOELECTRONIC TRAP LI-LI-O IN GAP [J].
DEAN, PJ .
PHYSICAL REVIEW B, 1971, 4 (08) :2596-&