LINEWIDTH ENHANCEMENT FACTOR IN STRAINED QUANTUM-WELL LASERS

被引:28
作者
DUTTA, NK
WYNN, J
SIVCO, DL
CHO, AY
机构
关键词
D O I
10.1063/1.102944
中图分类号
O59 [应用物理学];
学科分类号
摘要
The linewidth enhancement factor α in an In0.2Ga 0.8As/GaAs strained-layer multiple quantum well (MQW) laser has been determined from the spontaneous emission spectra below threshold. The measured α at the lasing wavelength is found to be 1.0 compared to a value of 5 typically observed for InGaAsP/InP double-heterostructure lasers. The smaller α shows that single wavelength strained MQW lasers may have smaller chirp width under modulation and also smaller cw linewidth.
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页码:2293 / 2294
页数:2
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