VIBRATION SPECTROSCOPY FOR SURFACE-LAYERS ON SI

被引：5

作者：

MULLER, F

SCHWARZ, N

PETROVAKOCH, V

KOCH, F

机构：

来源：

APPLIED SURFACE SCIENCE | 1989年 / 39卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(89)90425-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：127 / 134

页数：8

共 11 条

[1] SILICON-SILICON DIOXIDE INTERFACE - AN INFRARED STUDY [J].

BOYD, IW ;

WILSON, JIB .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (08) :3195-3200

[2] INFRARED SPECTRA OF MONOLAYERS ON METAL MIRRORS [J].

FRANCIS, SA ;

ELLISON, AH .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1959, 49 (02) :131-138

[3]

GRAF D, 1989, J VAC SCI TECHNOL A, V7, P808, DOI 10.1116/1.575845

[4] EFFECTIVE THICKNESS OF BULK MATERIALS AND OF THIN FILMS FOR INTERNAL REFLECTION SPECTROSCOPY [J].

HARRICK, NJ ;

DUPRE, FK .

APPLIED OPTICS, 1966, 5 (11) :1739-&

[5] ELECTRIC FIELD STRENGTHS AT TOTALLY REFLECTING INTERFACES [J].

HARRICK, NJ .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1965, 55 (07) :851-&

[6] LOW-TEMPERATURE GROWTH OF SILICON DIOXIDE FILMS - A STUDY OF CHEMICAL BONDING BY ELLIPSOMETRY AND INFRARED-SPECTROSCOPY [J].

LUCOVSKY, G ;

MANITINI, MJ ;

SRIVASTAVA, JK ;

IRENE, EA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (02) :530-537

[7]

MULLER F, 1988, SEMICOND SCI TECH, V3, P1132

[8] INFRARED-SPECTROSCOPY OF THIN SILICON DIOXIDE ON SILICON [J].

OLSEN, JE ;

SHIMURA, F .

APPLIED PHYSICS LETTERS, 1988, 53 (20) :1934-1936

[9] SI-]SIO2 TRANSFORMATION - INTERFACIAL STRUCTURE AND MECHANISM [J].

OURMAZD, A ;

TAYLOR, DW ;

RENTSCHLER, JA ;

BEVK, J .

PHYSICAL REVIEW LETTERS, 1987, 59 (02) :213-216

[10]

Philipp H, 1985, HDB OPTICAL CONSTANT, V1st

← 1 2 →