APPLICATION OF THE LAMP-ANNEALING METHOD TO THE N+-LAYER OF WSIX-GATE SELF-ALIGNED GAAS-MESFETS

被引：7

作者：

OHNISHI, T

YAMAGUCHI, Y

INADA, T

YOKOYAMA, N

NISHI, H

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1984年 / 5卷 / 10期

关键词：

D O I：

10.1109/EDL.1984.25964

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：403 / 405

页数：3

相关论文

共 12 条

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