Energy capability enhancement for isolated extended drain NMOS transistors

被引：1

作者：

Nie, Weidong ^{[1
,2
]}

Wu, Jin ^{[3
]}

Ma, Xiaohui ^{[2
,3
]}

Yu, Zongguang ^{[1
]}

机构：

[1] Jiangnan Univ, Sch Informat, Wuxi 214122, Peoples R China

[2] Wuxi Crystal Source Elect Co Ltd, Wuxi 214028, Peoples R China

[3] Wuxi Branch Southeast Univ, Wuxi 214135, Peoples R China

来源：

JOURNAL OF SEMICONDUCTORS | 2012年 / 33卷 / 02期

关键词：

energy capability; isolated extended drain NMOS transistors; safe operating area; parasitic NPN; TLP; on-state breakdown voltage;

D O I：

10.1088/1674-4926/33/2/024004

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Isolated extended drain NMOS (EDNMOS) transistors are widely used in power signal processing. The hole current induced by a high electric field can result in a serious reliability problem due to a parasitic NPN effect. By optimizing p-type epitaxial (p-epi) thickness, n-type buried layer (BLN) and nwell doping distribution, the peak electric field is decreased by 30% and the peak hole current is decreased by 60%, which obviously suppress the parasitic NPN effect. Measured I-V characteristics and transmission line pulsing (TLP) results show that the on-state breakdown voltage is increased from 28 to 37 V when 6 V V-gs is applied and the energy capability is improved by about 30%, while the on-state resistance remains unchanged.

引用

页数：6

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