SOME CHARACTERISTICS OF AGGAS2 SINGLE-CRYSTALS GROWN FROM THE MELT

被引：15
作者：
MOCHIZUKI, K
NIWA, E
IWANAGA, H
MASUMOTO, K
机构：
[1] RES INST ELECT & MAGNET MAT,SENDAI 982,JAPAN
[2] NAGASAKI UNIV,FAC LIBERAL ARTS,NAGASAKI 852,JAPAN
来源：
JOURNAL OF CRYSTAL GROWTH | 1993年 / 131卷 / 1-2期
关键词：
D O I：
10.1016/0022-0248(93)90394-C
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The three-phase co-existing line of AgGaS2 was briefly determined as a function of controlled sulfur vapor pressures (Ps2), one of the constituent elements, and the P(S2)-T diagram was made. Step structures which relate to the growth mechanism were observed on the (112) surface and the crystallographic orientation was determined. Photoluminescence (PL) spectra at 4.2 K showed prominent band-edge emissions at 2.63 and 2.673 eV and it is expected that the emissions relate to the native defects such as Ag vacancies. The electrical conductivity of the as-grown crystals showed an extremely low conductivity of 10(-10) (OMEGA cm)-1 and shallow traps with activation energies of 0.03 and 0.11 eV were found.
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页码：41 / 48
页数：8
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