THE COMPOSITION AND PHYSICAL-PROPERTIES OF LPCVD SILICON-NITRIDE DEPOSITED WITH DIFFERENT NH3 SIH2CL2 GAS RATIOS

被引：37
作者：
PAN, P
BERRY, W
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 12期
关键词：
D O I：
10.1149/1.2113711
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：3001 / 3005
页数：5
相关论文
共 28 条
[1]   VARIATION IN THE STOICHIOMETRY OF THIN SILICON-NITRIDE INSULATING FILMS ON SILICON AND ITS CORRELATION WITH MEMORY TRAPS [J].
BAILEY, RS ;
KAPOOR, VJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03) :484-487
[2]  
BERRY W, 1983, ADV XRAY ANAL, P26
[3]  
BHATTACHARYYA A, 1980, ELECTROCHEMICAL SOC, P144
[4]   NONVOLATILE SEMICONDUCTOR MEMORY DEVICES [J].
CHANG, JJ .
PROCEEDINGS OF THE IEEE, 1976, 64 (07) :1039-1059
[5]   GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J].
DEAL, BE ;
GROVE, AS .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3770-&
[6]  
DESIMONE RR, 1979, ISSCC DIG TECH PAPER, P154
[7]   HIGH-CURRENT INJECTION INTO SIO2 FROM SI RICH SIO2-FILMS AND EXPERIMENTAL APPLICATIONS [J].
DIMARIA, DJ ;
DONG, DW .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) :2722-2735
[8]   STOICHIOMETRY AND MASKING ABILITY OF LPCVD SILICON-NITRIDE AGAINST ARSENIC DIFFUSION [J].
DIXIT, A ;
CHEN, CS ;
VOLK, CE .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (10) :2239-2242
[9]   PREPARATION AND SOME PROPERTIES OF CHEMICALLY VAPOR-DEPOSITED SI-RICH SIO2 AND SI3N4 FILMS [J].
DONG, D ;
IRENE, EA ;
YOUNG, DR .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (05) :819-823
[10]   STRESS IN ION-IMPLANTED CVD SI3N4 FILMS [J].
EERNISSE, EP .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) :3337-3341
123