THERMAL-OXIDATION OF TRANSITION-METAL SILICIDES - THE ROLE OF MASS-TRANSPORT

被引：21
作者：
BARTUR, M
机构：
来源：
THIN SOLID FILMS | 1983年 / 107卷 / 01期
关键词：
D O I：
10.1016/0040-6090(83)90007-X
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：55 / 65
页数：11
相关论文
共 34 条
[1]   RADIOACTIVE N NI-STAR TRACER STUDY OF THE NICKEL SILICIDE GROWTH-MECHANISM [J].
BAGLIN, JEE ;
ATWATER, HA ;
GUPTA, D ;
DHEURLE, FM .
THIN SOLID FILMS, 1982, 93 (3-4) :255-264
[2]   THERMAL-OXIDATION OF NICKEL DISILICIDE [J].
BARTUR, M ;
NICOLET, MA .
APPLIED PHYSICS LETTERS, 1982, 40 (02) :175-177
[3]   THERMAL-OXIDATION OF COBALT DISILICIDE [J].
BARTUR, M ;
NICOLET, MA .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 29 (02) :69-70
[4]  
BARTUR M, 1983, UNPUB
[5]  
BARTUR M, 1983, J APPL PHYS, V54, P5407
[6]   OXIDATION MECHANISMS IN TISI2 FILMS ON SINGLE SILICON SUBSTRATES [J].
CHEN, JR ;
HOUNG, MP ;
HSIUNG, SK ;
LIU, YC .
APPLIED PHYSICS LETTERS, 1980, 37 (09) :824-826
[7]   INVESTIGATION ON TISI2 THIN-FILM OXIDATION BY RADIOACTIVE-TRACER TECHNIQUE [J].
CHEN, JR ;
LIU, YC ;
CHU, SD .
APPLIED PHYSICS LETTERS, 1982, 40 (03) :263-265
[8]   OXIDATION OF TITANIUM DISILICIDE ON POLYCRYSTALLINE SILICON [J].
CHEN, JR ;
LIU, YC ;
CHU, SD .
JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (02) :355-389
[9]   THERMAL-OXIDATION OF NIOBIUM SILICIDE THIN-FILMS [J].
CHOW, TP ;
HAMZEH, K ;
STECKL, AJ .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) :2716-2719
[10]   1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE [J].
CROWDER, BL ;
ZIRINSKY, S .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) :291-293
1234