INP LAYER GROWN ON (001)SILICON SUBSTRATE BY EPITAXIAL LATERAL OVERGROWTH

被引：49

作者：

NARITSUKA, S ^{[1
]}

NISHINAGA, T ^{[1
]}

TACHIKAWA, M ^{[1
]}

MORI, H ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, OPT ELECTR LABS, ATSUGI, KANAGAWA 24301, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1995年 / 34卷 / 11A期

关键词：

HETEROEPITAXY; EPITAXIAL LATERAL OVERGROWTH; INDIUM PHOSPHIDE; SILICON; LIQUID PHASE EPITAXY; DISLOCATION-FREE; PHOTOLUMINESCENCE; CRYSTALLINE QUALITY IMPROVEMENT;

D O I：

10.1143/JJAP.34.L1432

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An InP epitaxial layer with a dislocation-free area was obtained for the first time on (001) Si substrate by using the epitaxial lateral overgrowth (ELO) technique, Most etch pits appeared in the region over the seed area on the ELO stripe. This indicates that the SiO2 film between the lateral overgrowth layer and the substrate prevented the propagation of the dislocations from the substrate to the lateral overgrowth layer, Spatially resolved photoluminescence showed that the optical quality of an InP ELO layer grown on Si was almost the same as that of a homoepitaxially grown InP layer and that the ELO technique is also useful to relieve stress caused by both the lattice mismatch and the difference in thermal expansion coefficient.

引用

页码：L1432 / L1435

页数：4

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