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- [1] USE OF A COMPUTER SIMULATION TO INVESTIGATE THE INFLUENCE OF NONLINEAR PHYSICAL EFFECTS OF THE CURRENT-VOLTAGE CHARACTERISTIC OF SILICON MULTILAYER STRUCTURES. Soviet journal of communications technology & electronics, 1987, 32 (01): : 99 - 104
- [2] INVESTIGATION OF THE INFLUENCE OF THE AUGER RECOMBINATION PROCESS ON THE CURRENT-VOLTAGE CHARACTERISTICS OF MULTILAYER SILICON STRUCTURES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (03): : 293 - 296
- [3] INFLUENCE OF RADIATION DEFECTS ON THE CURRENT-VOLTAGE CHARACTERISTICS OF SILICON MULTILAYER STRUCTURES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (03): : 334 - 335
- [4] INFLUENCE OF AUGER RECOMBINATION ON THE CURRENT-VOLTAGE CHARACTERISTICS OF SILICON MULTILAYER STRUCTURES AT HIGH-CURRENT DENSITIES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (05): : 512 - 516
- [5] CURRENT-VOLTAGE CHARACTERISTIC OF A NONLINEAR RESISTOR NETWORK JOURNAL DE PHYSIQUE, 1987, 48 (10): : 1609 - 1611
- [7] INVESTIGATION OF CURRENT-VOLTAGE CHARACTERISTIC OF A SEMICONDUCTOR TRIGGER SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (07): : 965 - 966
- [8] INVESTIGATION OF CURRENT-VOLTAGE CHARACTERISTICS OF SILICON-CARBIDE DIODE STRUCTURES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (05): : 532 - 534
- [10] RESONANCE PHENOMENA IN THE CURRENT-VOLTAGE CHARACTERISTIC OF A JOSEPHSON-JUNCTION PHYSICAL REVIEW B, 1994, 50 (09): : 6332 - 6339