THE AMORPHIZATION OF CERAMICS BY ION-BEAMS

被引：74

作者：

MCHARGUE, CJ

FARLOW, GC

WHITE, CW

WILLIAMS, JM

APPLETON, BR

NARAMOTO, H

机构：

[1] Oak Ridge Natl Lab, Oak Ridge, TN,, USA, Oak Ridge Natl Lab, Oak Ridge, TN, USA

来源：

MATERIALS SCIENCE AND ENGINEERING | 1985年 / 69卷 / 01期

关键词：

ION BEAMS - Applications - ZIRCONIUM AND ALLOYS - Ion Sources;

D O I：

10.1016/0025-5416(85)90382-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The influence of the implantation parameters fluence, substrate temperature and chemical species on the formation of amorphous phases in Al//2O//3 and alpha -SiC was studied. At 300 K, fluences in excess of 10**1**7 ions cm** minus **2 were generally required to amorphize Al//2O//3; however, the implantation of zirconium formed the amorphous phase at a fluence of 4 multiplied by 10**1**6 Zr** plus ions cm** minus **2. The microindentation hardness of the amorphous material was about 60% of that of the crystalline counterpart.

引用

页码：123 / 127

页数：5

共 17 条

[1]

BURNETT PJ, UNPUB J MATER SCI

[2]

HIOKI T, UNPUB NUCL INSTRUM B

[3] ON FORMATION OF ION-BOMBARDMENT-INDUCED DISORDER IN ZIRCON, CORUNDUM AND DIAMOND . STIDIES ON BOMBARDMENT-INDUCED DISORDER .2. [J].