EMISSION PROPERTIES OF INGAALP VISIBLE LIGHT-EMITTING-DIODES EMPLOYING A MULTI-QUANTUM-WELL ACTIVE LAYER

被引：15
作者：
SUGAWARA, H
ITAYA, K
HATAKOSHI, G
机构：
[1] Materials and Devices Research Laboratories, Research and Development Center, Toshiba Corporation, Saiwai-ku, Kawasaki, 210
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 10期
关键词：
LED; INGAALP; MULTI-QUANTUM-WELL; MISORIENTED SUBSTRATE; PHOTOLUMINESCENCE; EXTERNAL QUANTUM EFFICIENCY;
D O I：
10.1143/JJAP.33.5784
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Visible InGaAlP light-emitting diodes (LEDs) employing a multiquantum-well (MQW) active layer have been investigated. Photo luminescence measurements showed that growth on a GaAs substrate, with an intentional surface misorientation from the (100) plane towards the [011] direction, resulted in a marked improvement in the quality of the MQW compared with growth on a just (100) substrate. The emission properties of the LED strongly depended on the various parameters of the MQW structure, in particular the number of wells. The external quantum efficiency of a 600 nm LED with a 20-well MQW active layer was found to be 1.6%. The emission wavelength could be further reduced by 10 nm without any significant decrease in the external quantum efficiency.
引用
收藏
页码：5784 / 5787
页数：4
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