PLASMA-ENHANCED CVD OF TITANIUM SILICIDE

被引：40

作者：

ROSLER, RS

ENGLE, GM

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1984年 / 2卷 / 04期

关键词：

D O I：

10.1116/1.582871

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：733 / 737

页数：5

共 13 条

[1]

AVIGAL I, 1983, SOLID STATE TECHNOL, V26, P217

[2]

AVIGAL I, 1984, SOLID STATE TECHNOL, V27, P123

[3] MICROHARDNESS AND OTHER PROPERTIES OF HYDROGENATED AMORPHOUS-SILICON CARBIDE THIN-FILMS FORMED BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION [J].

BAYNE, MA ;

KUROKAWA, Z ;

OKORIE, NU ;

ROE, BD ;

JOHNSON, L ;

MOSS, RW .

THIN SOLID FILMS, 1983, 107 (02) :201-206

[4]

BRORS DL, 1983, SOLID STATE TECHNOL, V26, P183

[5]

CHU JK, 1983, ECS EXT ABS, V83, P510

[6] SILICON-NITRIDE FILM DEPOSITION BY HOT-WALL PLASMA-ENHANCED CVD FOR GAAS LSI [J].

ISHII, Y ;

AOKI, T ;

MIYAZAWA, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (01) :49-53

[7] PROPERTIES OF PLASMA-ENHANCED CVD SILICON FILMS .1. UNDOPED FILMS DEPOSITED FROM 525-DEGREES-C TO 725-DEGREES-C [J].

KAMINS, TI ;

CHIANG, KL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (10) :2326-2331

[8]

MCLACHLAN DR, 1983, WORKSHOP REFRACTORY

[9] RESISTIVITIES OF THIN-FILM TRANSITION-METAL SILICIDES [J].

MURARKA, SP ;

READ, MH ;

DOHERTY, CJ ;

FRASER, DB .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (02) :293-301

[10]

ROSLER RS, 1981, SOLID STATE TECHNOL, V24, P172

← 1 2 →