FREE-CARRIER LIFETIME AND DEEP-LEVEL LUMINESCENCE IN SEMI-INSULATING GAAS - THE INFLUENCE OF INDIUM DOPING AND GROWTH IN A MAGNETIC-FIELD

被引：10
作者：
LEO, K
RUHLE, WW
NORDBERG, P
FUJII, T
机构：
[1] MAX PLANCK INST,D-7000 STUTTGART 80,FED REP GER
[2] OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
来源：
JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 04期
关键词：
D O I：
10.1063/1.344351
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1800 / 1804
页数：5
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