MONTE-CARLO CALCULATIONS ON SPATIAL-DISTRIBUTION OF IMPLANTED IONS IN SILICON

被引：14

作者：

DESALVO, A

ROSA, R

机构：

[1] CNR,LA EL LAB,I-40126 BOLOGNA,ITALY

[2] UNIV BOLOGNA,FAC INGN,IST CHIM,I-40126 BOLOGNA,ITALY

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1976年 / 31卷 / 01期

关键词：

D O I：

10.1080/00337577608234778

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：41 / 45

页数：5

共 24 条

[1]

ALEXANDER RB, 1971, R6849 AERE UKAEA REP

[2]

BOLON RB, 1975, PRACTICAL SCANNING E, P299

[3]

BRICE DK, 1973, 3RD P INT C ION IMPL, P171

[4]

BRICE DK, 1975, ION IMPLANTATION RAN, V1

[5]

COMBASSON JL, 1973, 3RD P INT C ION IMPL, P285

[6] INFLUENCE OF AMORPHOUS PHASE ON ION DISTRIBUTIONS AND ANNEALING BEHAVIOR OF GROUP III AND GROUP V IONS IMPLANTED INTO SILICON [J].

CROWDER, BL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (06) :943-&

[7]

CROWDER BL, 1973, 3RD P INT C ION IMPL, P257

[8] MULTIPLE-SCATTERING AND CENTRAL LIMIT THEOREM - MONTE-CARLO APPROACH [J].

DESALVO, A ;

ROSA, R .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1975, 69 (01) :71-78

[9] DOSE DEPENDENCE OF PENETRATION AND DAMAGE PROFILES OF P+-CHANNELED IONS IN SILICON SIMULATED BY COMPUTER [J].

DESALVO, A ;

ROSA, R ;

ZIGNANI, F .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1975, 27 (1-2) :89-95

[10] COMPUTER EVALUATION OF PRIMARY DEPOSITED ENERGY PROFILES IN ION-IMPLANTED SILICON UNDER CHANNELING CONDITIONS [J].

DESALVO, A ;

ROSA, R ;

ZIGNANI, F .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (09) :3755-&

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