GROWTH AND CHARACTERIZATION OF INGAASP-INP LATTICE-MATCHED HETEROJUNCTIONS

被引：56

作者：

SANKARAN, R ^{[1
]}

ANTYPAS, GA ^{[1
]}

MOON, RL ^{[1
]}

ESCHER, JS ^{[1
]}

JAMES, LW ^{[1
]}

机构：

[1] VARIAN ASSOC,CORP SOLID STATE LAB,PALO ALTO,CA 94303

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1976年 / 13卷 / 04期

关键词：

D O I：

10.1116/1.569024

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：932 / 937

页数：6

共 16 条

[1] GROWTH CHARACTERIZATION OF INP-INGAASP LATTICE-MATCHED HETEROJUNCTIONS [J].

ANTYPAS, GA ;

MOON, RL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (11) :1574-1577

[2] GROWTH AND CHARACTERIZATION OF GAASSB-GAALASSB LATTICE-MATCHED HETEROJUNCTIONS [J].

ANTYPAS, GA ;

MOON, RL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (03) :416-418

[3]

ANTYPAS GA, TO BE PUBLISHED

[4]

ANTYPAS GA, 1973, GALLIUM ARSENIDE REL, P48

[5] ALXGA1-XAS1-Y'PY'-GAAS1-YPY HETEROSTRUCTURE LASER AND LAMP JUNCTIONS [J].

BURNHAM, RD ;

HOLONYAK, N ;

SCIFRES, DR .

APPLIED PHYSICS LETTERS, 1970, 17 (10) :455-&

[6]

Escher J. S., 1975, Critical Reviews in Solid State Sciences, V5, P577, DOI 10.1080/10408437508243514

[7]

HALLIWELL MAG, 1973, GAAS RELATED COMPOUN, P98

[8] LIQUID-PHASE EPITAXY OF INP [J].

HESS, K ;

STATH, N ;

BENZ, KW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (09) :1208-1212

[9] LOW-THRESHOLD LPE IN1-X'GAX'P1-Z'ASZ'-IN1-XGAXP1-ZASZ-IN1-X'GAX'P1-Z'ASZ' YELLOW DOUBLE-HETEROJUNCTION LASER-DIODES (J LESS THAN 104 A-CM2, LAMBDA EQUAL TO 5850 A, 77 DEGREESK) [J].

HITCHENS, WR ;

HOLONYAK, N ;

WRIGHT, PD ;

COLEMAN, JJ .

APPLIED PHYSICS LETTERS, 1975, 27 (04) :245-247

[10] PHOTOEMISSION FROM CESIUM-OXIDE-ACTIVATED IN GAASP [J].

JAMES, LW ;

ANTYPAS, GA ;

MOON, RL ;

EDGECUMBE, J ;

BELL, RL .

APPLIED PHYSICS LETTERS, 1973, 22 (06) :270-271

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