EFFECTIVENESS OF POLYCRYSTALLINE SILICON DIFFUSION SOURCES

[1] ARSENIC PROFILES IN BIPOLAR-TRANSISTORS WITH POLYSILICON EMITTERS [J]. SOLID-STATE ELECTRONICS, 1981, 24 (05) : 475 - 476

[2] BARSON F, 1982, 1ST P INT S VLSI SCI

[3] SIS TUNNEL EMITTER - THEORY FOR EMITTERS WITH THIN INTERFACE LAYERS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) : 1771 - 1776

[4] ARSENIC-IMPLANTED POLYSILICON LAYERS [J]. APPLIED PHYSICS, 1981, 24 (03): : 197 - 200

[5] HIGH-RESOLUTION RUTHERFORD BACKSCATTERING SPECTROMETRY AND THE ANALYSIS OF VERY THIN SILICON-NITRIDE LAYERS [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1982, 200 (2-3): : 499 - 504

[6] EPITAXIAL ALIGNMENT OF POLYCRYSTALLINE SI FILMS ON (100) SI [J]. APPLIED PHYSICS LETTERS, 1980, 37 (07) : 648 - 651

[7] ARSENIC IMPLANTATION INTO POLYCRYSTALLINE SILICON AND DIFFUSION TO SILICON SUBSTRATE [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (05) : 1815 - 1821

[8] WITTMAACK K, 1980, 8TH INT C XRAY OPT M, P311

[1] ARSENIC PROFILES IN BIPOLAR-TRANSISTORS WITH POLYSILICON EMITTERS [J]. SOLID-STATE ELECTRONICS, 1981, 24 (05) : 475 - 476

[2] BARSON F, 1982, 1ST P INT S VLSI SCI

[3] SIS TUNNEL EMITTER - THEORY FOR EMITTERS WITH THIN INTERFACE LAYERS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) : 1771 - 1776

[4] ARSENIC-IMPLANTED POLYSILICON LAYERS [J]. APPLIED PHYSICS, 1981, 24 (03): : 197 - 200

[5] HIGH-RESOLUTION RUTHERFORD BACKSCATTERING SPECTROMETRY AND THE ANALYSIS OF VERY THIN SILICON-NITRIDE LAYERS [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1982, 200 (2-3): : 499 - 504

[6] EPITAXIAL ALIGNMENT OF POLYCRYSTALLINE SI FILMS ON (100) SI [J]. APPLIED PHYSICS LETTERS, 1980, 37 (07) : 648 - 651

[7] ARSENIC IMPLANTATION INTO POLYCRYSTALLINE SILICON AND DIFFUSION TO SILICON SUBSTRATE [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (05) : 1815 - 1821

[8] WITTMAACK K, 1980, 8TH INT C XRAY OPT M, P311