ANALYSIS AND NUMERICAL MODELING OF SILICON-NITRIDE DEPOSITION IN A PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION REACTOR .1. BIDIMENSIONAL MODELING

被引：34

作者：

DOLLET, A ^{[1
]}

COUDERC, JP ^{[1
]}

DESPAX, B ^{[1
]}

机构：

[1] ENSIGC,GEN CHIM LAB,CNRS,URA 192,F-31078 TOULOUSE,FRANCE

来源：

PLASMA SOURCES SCIENCE & TECHNOLOGY | 1995年 / 4卷 / 01期

关键词：

D O I：

10.1088/0963-0252/4/1/010

中图分类号：

O35 [流体力学]; O53 [等离子体物理学];

学科分类号：

070204 ; 080103 ; 080704 ;

摘要：

A numerical model of silicon nitride deposition from an NH3-SiH4 mixture in a large-sized radiofrequency plasma reactor has been developed. A bidimensional treatment of transport phenomena, of major importance in this type of reactor, was used. Analysis of the modelling results showed that aminosilane radicals were the main deposition precursors. The steep decrease in deposition rate in the flow direction that was observed can be explained by examining the calculated concentration profiles.

引用

页码：94 / 106

页数：13

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