TRANSMISSION OF LOW-ENERGY O+ IONS THROUGH ULTRATHIN FILMS OF AR, KR, AND XE

被引:27
作者
SACK, NJ [1 ]
AKBULUT, M [1 ]
MADEY, TE [1 ]
机构
[1] RUTGERS STATE UNIV,SURFACE MODIFICAT LAB,PISCATAWAY,NJ 08855
来源
PHYSICAL REVIEW B | 1995年 / 51卷 / 07期
关键词
D O I
10.1103/PhysRevB.51.4585
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present a systematic study of the transmission of low-energy (<10 eV) O+ ions through ultrathin films of Ar, Kr, and Xe. The ions are produced by electron-stimulated desorption from an oxidized W(100) crystal; they desorb from the surface in directions close to the surface normal with a peak kinetic energy of ∼7 eV and their yield, mass/energy, and angle are measured with a digital electron-stimulated desorption ion angular distribution (ESDIAD) detector. Rare gases are condensed at ∼25 K onto the oxidized W(100) crystal and their film thickness is determined by means of thermal-desorption spectroscopy. The O+ ions desorbed in the presence of a rare-gas film have to pass through the film before reaching the detector. We find that 10% of O+ can be transmitted through 1.6 atomic layers of Ar, 2.9 ML of Kr, and 4.0 ML of Xe. From the O+ signal attenuation by films thicker than 2 ML we derive attenuation cross sections of 6.0×10-15 cm2 for Ar, 2.2×10-15 cm2 for Kr, and 1.5×10-15 cm2 for Xe. For Xe, we observe indications that the angular distribution of the ions changes due to large-angle scattering, and for Kr (and previously for Xe) we measure a shift in the energy distribution towards lower energies; we interpret this to be due to elastic forward scattering of the oxygen ions by the Xe atoms. We attribute the attenuation of the O+ in the films mainly to elastic backscattering; we suggest that either a high neutralization probability of O+ in the Ar film (charge transfer) or an Ar structure different from fcc (such as blocking of O+ by Ar) is the reason for the strong attenuation of O+ in Ar. We find greater attenuation per monolayer for thicker films than for the first monolayer; we correlate this with the fcc structure of the rare-gas films. We discuss the energy loss of the primary electrons in the rare-gas film, the effect of the adsorption of rare gases on the electron-stimulated desorption process, and the possibility of preferential O+ desorption through channels in the rare-gas film. We draw conclusions from our results concerning the depth of origin of secondary ions desorbed under the influence of electron, photon, or ion radiation. © 1995 The American Physical Society.
引用
收藏
页码:4585 / 4596
页数:12
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