AN X-RAY-DIFFRACTION STUDY OF EPITAXIAL LITHIUM TANTALATE FILMS DEPOSITED ON (0001)SAPPHIRE WAFERS USING RF DIODE SPUTTERING

被引：20

作者：

BLANTON, TN ^{[1
]}

CHATTERJEE, DK ^{[1
]}

机构：

[1] EASTMAN KODAK CO,DEPT ELECTR SYST,ROCHESTER,NY 14650

来源：

THIN SOLID FILMS | 1995年 / 256卷 / 1-2期

关键词：

EPITAXY; LATTICE PARAMETERS; SPUTTERING; X-RAY DIFFRACTION;

D O I：

10.1016/0040-6090(94)06284-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Epitaxial thin films of lithium tantalate have been r.f. diode sputtered onto (0001) single-crystal sapphire substrates. X-ray diffraction results show that, as the Li/(Li+Ta) ratio decreased below 0.5, the LiTaO3 (LTO type) c-axis lattice constant increased. An additional lithium tantalate phase is observed to coexist with the LTO-type phase at a Li/(Li+Ta) ratio of around 0.4. When the Li/(Li+Ta) ratio becomes close to 0.25, this additional phase is the only phase observed in the sputter-deposited thin film. Tilt-angle X-ray diffraction results confirmed that this additional phase is ilmenite-type (IL type) Li-(1-x)TaO3.

引用

页码：59 / 63

页数：5

共 22 条

[1] FERROELECTRIC LITHIUM NIOBATE .3. SINGLE CRYSTAL X-RAY DIFFRACTION STUDY AT 24 DEGREES C [J].