INSITU ELECTRON-BEAM PATTERNING FOR GAAS USING ELECTRON-CYCLOTRON-RESONANCE PLASMA-FORMED OXIDE MASK AND CL2 GAS ETCHING

被引：14

作者：

KOHMOTO, S

TAKADO, N

SUGIMOTO, Y

OZAKI, M

SUGIMOTO, M

ASAKAWA, K

机构：

[1] Opto-Electronics Research Laboratories, NEC Corporation, Tsukuba, Ibaraki 305

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 04期

关键词：

D O I：

10.1063/1.107909

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new in situ fabrication process for GaAs is developed. In this process, electron-cyclotron-resonance oxygen plasma is used for the first time to form an oxide mask for Cl2 gas etching. Using this technique, the time and oxygen gas pressure required for the oxidation are drastically reduced, compared to other oxidation methods. Line patterns with submicron width are successfully fabricated by partial modification of the oxide mask by electron beam irradiation and subsequent Cl2 gas etching.

引用

收藏

页码：444 / 446

页数：3

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