Deep Anisotropic Etching of Tapered Channels in (110)-Oriented Silicon

被引：4

作者：

Kolesar, Edward S., Jr. ^{[1
]}

Carver, Michael W. ^{[1
]}

机构：

[1] Air Force Inst Technol, Dept Elect & Comp Engn, Dayton, OH 45433 USA

来源：

CHEMISTRY OF MATERIALS | 1989年 / 1卷 / 06期

关键词：

D O I：

10.1021/cm00006a016

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A 50 wt % potassium hydroxide and deionized water anisotropic etchant was utilized to isothermally (85 degrees C) etch a staggered array of deep (290 mu m), 5-mu m wide, closely spaced (20.4 mu m), smooth-walled, tapered channels in (110)-oriented silicon wafers. A quantitative relationship that specifies the channel length as a function of the channel width and depth is developed. A buffered hydrofluoric acid isotropic etchant was employed to sharply point the top edges of the channel walls.

引用

页码：634 / 639

页数：7

共 37 条

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