DEFECT-FREE NUCLEATION OF SILICON ON [111] SILICON SURFACES

被引：33

作者：

SHIMBO, M

NISHIZAWA, J

TERASAKI, T

机构：

[1] TOHOKU UNIV, RES INST ELECT COMMUN, SENDAI, JAPAN

[2] SEMICOND RES INST, SENDAI, JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1974年 / 23卷 / 04期

关键词：

D O I：

10.1016/0022-0248(74)90068-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：267 / 274

页数：8

共 6 条

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[2] OBSERVATION OF NUCLEUS CENTERS ON SOLUTION-GROWN GERMANIUM EPITAXIAL LAYERS [J].

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[3]

Nishizawa J.-I., 1972, Journal of Crystal Growth, V13-14, P297, DOI 10.1016/0022-0248(72)90173-X

[4] SILICON EPITAXIAL-GROWTH [J].

NISHIZAWA, JI ;

TERASAKI, T ;

SHIMBO, M .

JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) :241-+

[5] SCREW-TYPE NUCLEUS CENTERS IN SILICON EPITAXIAL GROWTH [J].

SHIMBO, M ;

TERASAKI, T ;

NISHIZAWA, JI .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (01) :487-+

[6] SURFACE ORIENTATION EFFECT OF SHADOW OF STACKING FAULT [J].

SUNAMI, H ;

TERASAKI, T ;

MIYAMOTO, N ;

NISHIZAW.JI .

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