AN EXPERIMENTAL AND THEORETICAL-STUDY OF THE FORMATION AND MICROSTRUCTURE OF POROUS SILICON

被引：491
作者：
BEALE, MIJ
BENJAMIN, JD
UREN, MJ
CHEW, NG
CULLIS, AG
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1985年 / 73卷 / 03期
关键词：
D O I：
10.1016/0022-0248(85)90029-6
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：622 / 636
页数：15
相关论文
共 15 条
[1]   A STUDY OF SILICON MBE ON POROUS SILICON SUBSTRATES [J].
BEALE, MIJ ;
CHEW, NG ;
CULLIS, AG ;
GASSON, DB ;
HARDEMAN, RW ;
ROBBINS, DJ ;
YOUNG, IM .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02) :732-735
[2]   MICROSTRUCTURE AND FORMATION MECHANISM OF POROUS SILICON [J].
BEALE, MIJ ;
CHEW, NG ;
UREN, MJ ;
CULLIS, AG ;
BENJAMIN, JD .
APPLIED PHYSICS LETTERS, 1985, 46 (01) :86-88
[3]  
BEALE MIJ, UNPUB
[4]  
Bockris J.O.M., 1970, MODERN ELECTROCHEMIS
[5]   POROUS SILICON FILMS - PREPARATION AND EXAMINATION WITH SURFACE AND OPTICAL METHODS [J].
HARDEMAN, RW ;
BEALE, MIJ ;
GASSON, DB ;
KEEN, JM ;
PICKERING, C ;
ROBBINS, DJ .
SURFACE SCIENCE, 1985, 152 (APR) :1051-1062
[6]   A NEW DIELECTRIC ISOLATION METHOD USING POROUS SILICON [J].
IMAI, K .
SOLID-STATE ELECTRONICS, 1981, 24 (02) :159-&
[7]  
IMAI K, 1981, P INT ELECTRON DEVIC, P376
[8]  
IMAI K, 1979, JPN J APPL PHYS, V18, P281
[9]   A NEW SILICON-ON-INSULATOR STRUCTURE USING A SILICON MOLECULAR-BEAM EPITAXIAL-GROWTH ON POROUS SILICON [J].
KONAKA, S ;
TABE, M ;
SAKAI, T .
APPLIED PHYSICS LETTERS, 1982, 41 (01) :86-88
[10]   KINETICS AND MECHANISM OF POROUS LAYER GROWTH DURING NORMAL-TYPE SILICON ANODIZATION IN HF SOLUTION [J].
PARKHUTIK, VP ;
GLINENKO, LK ;
LABUNOV, VA .
SURFACE TECHNOLOGY, 1983, 20 (03) :265-277
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