TEMPERATURE-DEPENDENT HALL-COEFFICIENT IN 2-DIMENSIONAL HEAVILY DOPED P-TYPE GERMANIUM

被引：0
|
作者：
TESSLER, LR [1 ]
DEUTSCHER, G [1 ]
机构：
[1] TEL AVIV UNIV,SACKLER FAC SCI,SCH PHYS & ASTRON,IL-69978 TEL AVIV,ISRAEL
来源：
SOLID STATE COMMUNICATIONS | 1990年 / 74卷 / 04期
关键词：
D O I：
10.1016/0038-1098(90)90175-B
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We performed accurate measurements of the Hall coefficient at low temperatures of two-dimensional polycrystalline thin films of heavily doped p-type germanium. We found a logarithmic dependence on the temperature, that can be associated with interaction effects in the particle-hole channel. Comparison with the variation of the resistance per square indicated that interaction is more important than localisation for the determination of the electronic properties of this material. The screening factor F was found to be 0.55±0.15, taking into account the strong spin-orbit coupling in p-type germanium. This value is lower than the one predicted by the free electron gas model. © 1990.
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页码：219 / 221
页数：3
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