GAAS-ALGAAS HBT WITH CARBON DOPED BASE LAYER GROWN BY MOMBE

被引：35

作者：

REN, F

ABERNATHY, CR

PEARTON, SJ

FULLOWAN, TR

LOTHIAN, J

JORDAN, AS

机构：

[1] AT & T Bell Laboratories, Murray Hill

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 11期

关键词：

Microwave devices and components; Semiconductor devices and materials;

D O I：

10.1049/el:19900472

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The first demonstration of GaAs/AlGaAs HBTs grown completely by metal organic molecularbeam epitaxy (MOMBE) is reported. The The p-typedopant used for the base layer was carbon. Tin was used as the n-type dopant for the emitter as well as the collector. A common-emitter current gain of 140 was measured for 90 µm diameter devices with a base doping of 1 × 1019cm-3. Small area (2 × 6µm2), devices show a current gain cut-off frequency of ~40 GHz. © 1990, The Institution of Electrical Engineers. All rights reserved.

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页码：724 / 725

页数：2

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