PHONON DENSITY OF STATES OF AMORPHOUS-SILICON

被引：7

作者：

SHANKS, HR

KAMITAKAHARA, WA

MCCLELLAND, JF

CARLONE, C

机构：

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1983年 / 59-6卷 / DEC期

关键词：

D O I：

10.1016/0022-3093(83)90555-0

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：197 / 200

页数：4

共 6 条

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BRODSKY, MH ;

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[3] BONDING IN HYDROGENATED AMORPHOUS-SILICON [J].

SHANKS, HR ;

JEFFREY, FR ;

LOWRY, ME .

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[4] THE ACOUSTIC LOCAL MODE OF H, D, AND F IN AMORPHOUS-GERMANIUM AND SILICON [J].

SHEN, SC ;

FANG, CJ ;

CARDONA, M .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1980, 101 (02) :451-459

[5] FAR-INFRARED ABSORPTION OF PURE AND HYDROGENATED A-GE AND A-SI [J].

SHEN, SC ;

FANG, CJ ;

CARDONA, M ;

GENZEL, L .

PHYSICAL REVIEW B, 1980, 22 (06) :2913-2919

[6] RAMAN SPECTRA OF AMORPHOUS SI AND RELATED TETRAHEDRALLY BONDED SEMICONDUCTORS [J].

SMITH, JE ;

BRODSKY, MH ;

CROWDER, BL ;

NATHAN, MI ;

PINCZUK, A .

PHYSICAL REVIEW LETTERS, 1971, 26 (11) :642-&

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