DEVICE-QUALITY SIO2-FILMS ON INP AND SI OBTAINED BY OPERATING THE PYROLYTIC CVD REACTOR IN THE RETARDATION REGIME

被引：16

作者：

LAKHANI, AA

机构：

[1] Bendix Advanced Technology Cent,, Columbia, MD, USA, Bendix Advanced Technology Cent, Columbia, MD, USA

来源：

SOLID-STATE ELECTRONICS | 1984年 / 27卷 / 10期

关键词：

D O I：

10.1016/0038-1101(84)90013-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

SEMICONDUCTOR DEVICES, MIS

引用

页码：921 / 924

页数：4

共 12 条

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[8] INDIRECT PLASMA DEPOSITION OF SILICON DIOXIDE
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[9] SLOW CURRENT-DRIFT MECHANISM IN N-CHANNEL INVERSION TYPE INP-MISFET
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