EMBEDDED-MIRROR SEMICONDUCTOR-LASER

被引：7

作者：

LAIDIG, WD

LEE, JW

CALDWELL, PJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 05期

关键词：

D O I：

10.1063/1.95309

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：485 / 487

页数：3

共 7 条

[1]

FUKUZAWA T, 1983, INT ELECTRON DEVICES

[2] IR-RED GAAS-ALAS SUPER-LATTICE LASER MONOLITHICALLY INTEGRATED IN A YELLOW-GAP CAVITY [J].

HOLONYAK, N ;

LAIDIG, WD ;

CAMRAS, MD ;

COLEMAN, JJ ;

DAPKUS, PD .

APPLIED PHYSICS LETTERS, 1981, 39 (01) :102-104

[3]

LAIDIG WD, 1981, APPL PHYS LETT, V38, P776, DOI 10.1063/1.92159

[4] ALL-BINARY ALAS-GAAS LASER DIODE [J].

LAIDIG, WD ;

CALDWELL, PJ ;

KIM, K ;

LEE, JW .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (07) :212-214

[5] A SIMPLE-MODEL FOR THE INDEX OF REFRACTION OF GAAS-ALAS SUPER-LATTICES AND HETEROSTRUCTURE LAYERS - CONTRIBUTIONS OF THE STATES AROUND GAMMA [J].

LEBURTON, JP ;

HESS, K .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02) :415-419

[6] INDEX OF REFRACTION OF ALAS-GAAS SUPER-LATTICES [J].

LEBURTON, JP ;

HESS, K ;

HOLONYAK, N ;

COLEMAN, JJ ;

CAMRAS, M .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (07) :4230-4231

[7]

SUZUKI Y, 1982, 2ND INT S MOL BEAM E, P51

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