CMOS VLSI SINGLE EVENT TRANSIENT CHARACTERIZATION

被引：16

作者：

HEILEMAN, SJ ^{[1
]}

EISENSTADT, WR ^{[1
]}

FOX, RM ^{[1
]}

WAGNER, RS ^{[1
]}

BORDES, N ^{[1
]}

BRADLEY, JM ^{[1
]}

机构：

[1] UNIV CALIF LOS ALAMOS SCI LAB,LOS ALAMOS,NM 87544

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1989年 / 36卷 / 06期

关键词：

D O I：

10.1109/23.45437

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：2287 / 2291

页数：5

相关论文

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