RECENT PROGRESS ON LADA GROWTH OF HGCDTE AND CDTE EPITAXIAL LAYERS

被引：71

作者：

CHEUNG, JT ^{[1
]}

MAGEE, T ^{[1
]}

机构：

[1] ADV RES & APPLICAT CORP, SUNNYVALE, CA 94086 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1983年 / 1卷 / 03期

关键词：

D O I：

10.1116/1.572276

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1604 / 1607

页数：4

共 9 条

[1] GROWTH OF HGCDTE FILMS BY LASER-INDUCED EVAPORATION AND DEPOSITION [J].

CHEUNG, JT ;

CHEUNG, DT .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (01) :182-186

[2] CDXHG1-XTE N-TYPE LAYERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

FAURIE, JP ;

MILLION, A .

APPLIED PHYSICS LETTERS, 1982, 41 (03) :264-266

[3] MOLECULAR-BEAM EPITAXY OF CDTE AND CDXHG1-XTE [J].

FAURIE, JP ;

MILLION, A ;

JACQUIER, G .

THIN SOLID FILMS, 1982, 90 (01) :107-112

[4] SELECTIVE ETCHING OF GALLIUM ARSENIDE CRYSTALS IN H2SO4-H2O2-H2O SYSTEM [J].

LIDA, S .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (05) :768-&

[5]

MATTHEWS JW, 1978, DISLOCATIONS SOLIDS, V2

[6] OPTICAL-PROPERTIES OF POLYCRYSTALLINE CDTE-FILMS [J].

MYERS, TH ;

EDWARDS, SW ;

SCHETZINA, JF .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) :4231-4237

[7]

RONSILLE R, 1982, J CRYST GROWTH, V56, P101

[8]

SCHETZINA JF, 1982, DARPA CONTRACT REV

[9] VACUUM DEPOSITION BY HIGH-ENERGY LASER WITH EMPHASIS ON BARIUM TITANATE FILMS [J].

SCHWARZ, H ;

TOURTELLOTTE, HA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (03) :373-+

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