PLANAR, ION-IMPLANTED BIPOLAR-DEVICES IN GAAS

[1] Ahrenkiel R. K., 1976, International Electron Devices Meeting. (Technical digest), P426

[2] LOW-TEMPERATURE ANNEALING BEHAVIOR OF GAAS IMPLANTED WITH BE [J]. APPLIED PHYSICS LETTERS, 1979, 35 (02) : 178 - 180

[3] ANTELL GR, 1971, SEMICONDUCTORS SEMIM, V7

[4] ANTELL J, 1966, SEP P INT S I PHYS P, P201

[5] DOUBLE DIFFUSED GALLIUM ARSENIDE TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1965, 8 (03) : 255 - &

[6] CHATTERJEE PK, 1975, INT EL DEV M, P187

[7] HAIDEMENAKIS ED, 1961, P IRE, V49, P1448

[8] SINGLE-STEP OPTICAL LIFT-OFF PROCESS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1980, 24 (04) : 452 - 460

[9] PROPERTIES OF BE-IMPLANTED PLANAR GAAS P-N-JUNCTIONS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1978, 13 (04) : 426 - 429

[10] HELIX MJ, 1977, IEDM TECH DIG, P195

[1] Ahrenkiel R. K., 1976, International Electron Devices Meeting. (Technical digest), P426

[2] LOW-TEMPERATURE ANNEALING BEHAVIOR OF GAAS IMPLANTED WITH BE [J]. APPLIED PHYSICS LETTERS, 1979, 35 (02) : 178 - 180

[3] ANTELL GR, 1971, SEMICONDUCTORS SEMIM, V7

[4] ANTELL J, 1966, SEP P INT S I PHYS P, P201

[5] DOUBLE DIFFUSED GALLIUM ARSENIDE TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1965, 8 (03) : 255 - &

[6] CHATTERJEE PK, 1975, INT EL DEV M, P187

[7] HAIDEMENAKIS ED, 1961, P IRE, V49, P1448

[8] SINGLE-STEP OPTICAL LIFT-OFF PROCESS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1980, 24 (04) : 452 - 460

[9] PROPERTIES OF BE-IMPLANTED PLANAR GAAS P-N-JUNCTIONS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1978, 13 (04) : 426 - 429

[10] HELIX MJ, 1977, IEDM TECH DIG, P195