RELIABILITY OF DH GAAS LASERS AT ELEVATED-TEMPERATURES

被引：140

作者：

HARTMAN, RL ^{[1
]}

DIXON, RW ^{[1
]}

机构：

[1] BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA

来源：

APPLIED PHYSICS LETTERS | 1975年 / 26卷 / 05期

关键词：

D O I：

10.1063/1.88135

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：239 / 242

页数：4

共 24 条

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DEAN, PJ .

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HAKKI, BW ;

HARTMAN, RL ;

DASARO, LA .

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[4]

DELOACH BC, 1973, INT ELECTRON DEVICES

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DYMENT, JC ;

NASH, FR ;

HWANG, CJ ;

ROZGONYI, GA ;

HARTMAN, RL ;

MARCOS, HM ;

HASZKO, SE .

APPLIED PHYSICS LETTERS, 1974, 24 (10) :481-484

[6] CW DEGRADATION AT 300 DEGREES K OF GAAS DOUBLE-HETEROSTRUCTURE JUNCTION LASERS .2. ELECTRONIC GAIN [J].

HAKKI, BW ;

PAOLI, TL .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (09) :4113-4119

[7] CONTINUOUS OPERATION OF GAAS-GA1-XALXAS DOUBLE-HETEROSTRUCTURE LASERS WITH 30 DEGREES C HALF-LIVES EXCEEDING 1000-H [J].

HARTMAN, RL ;

DYMENT, JC ;

HWANG, CJ ;

KUHN, M .

APPLIED PHYSICS LETTERS, 1973, 23 (04) :181-183

[8] STRAIN-INDUCED DEGRADATION OF GAAS INJECTION LASERS [J].

HARTMAN, RL ;

HARTMAN, AR .

APPLIED PHYSICS LETTERS, 1973, 23 (03) :147-149

[9] DEGRADATION AND PASSIVATION OF GAP LIGHT-EMITTING DIODES [J].

HARTMAN, RL ;

SCHWARTZ, B ;

KUHN, M .

APPLIED PHYSICS LETTERS, 1971, 18 (07) :304-&

[10]

HAYASHI I, 1973, INT ELECTRON DEVICES

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