SILICIDES FORMATION FOR REFRACTORY-METAL ALLOYS (TA-V AND TI-V) ON SI

被引：20

作者：

APPELBAUM, A

EIZENBERG, M

机构：

[1] TECHNION ISRAEL INST TECHNOL,DEPT MAT ENGN,IL-32000 HAIFA,ISRAEL

[2] TECHNION ISRAEL INST TECHNOL,INST SOLID STATE,IL-32000 HAIFA,ISRAEL

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 56卷 / 08期

关键词：

D O I：

10.1063/1.334271

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2341 / 2345

页数：5

共 24 条

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[6] FORMATION OF SHALLOW SILICIDE CONTACTS OF HIGH SCHOTTKY-BARRIER ON SI - ALLOYING PD AND PT WITH W VS ALLOYING PD AND PT WITH SI [J].

EIZENBERG, M ;

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[7]

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[8] SILICIDE FORMATION WITH PD-V ALLOYS AND BILAYERS [J].

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[9] REFRACTORY SILICIDES FOR INTEGRATED-CIRCUITS [J].

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[10]

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