FOCUSED-ION-BEAM-INDUCED TUNGSTEN DEPOSITION FOR IC REPAIR

被引：11

作者：

VANDENHEUVEL, FC

OVERWIJK, MHF

FLEUREN, EM

LAISINA, H

SAUER, KJ

机构：

[1] Philips Research Laboratories, 5600 JA Eindhoven

[2] Philips Semiconductors, 6534 AE Nijmegen

来源：

MICROELECTRONIC ENGINEERING | 1993年 / 21卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(93)90057-C

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The modification or repair of integrated circuits by means of focused-ion-beam-induced deposition occasionally fails due to interruptions in the deposited metal line at steps on the surface. In this paper we study the parameters which determine the quality of the step coverage. The flow direction of the precursor gas and redeposition of sputtered material are found to be important.

引用

页码：209 / 212

页数：4

共 4 条

[1]

Overwijk, van den Heuvel, Ion Beam Modification of Materials (IBMM), (1992)

[2]

Tao, Ro, Melngailis, Xue, Kaesz, Focused ion beam induced deposition of platinum, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 8 B, (1990)

[3]

Stewart, Morgan, Ward, Focused ion beam induced deposition of tungsten on vertical sidewalls, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 9 B, (1991)

[4]

Muller, Simulation of X-Ray Mask Repair by Means of FIB-Technology, Japanese Journal of Applied Physics, 28, (1989)

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