Investigation of the impact of different ARC layers using PC1D simulation: application to crystalline silicon solar cells

被引：28
|
作者：
Hashmi, Galib [1 ]
Rashid, Mohammad Junaebur [1 ]
Mahmood, Zahid Hasan [1 ]
Hoq, Mahbubul [2 ]
Rahman, Md. Habibur [1 ]
机构：
[1] Univ Dhaka, Dept Elect & Elect Engn, Dhaka, Bangladesh
[2] Bangladesh Atom Energy Commiss, AERE, Inst Energy, Dhaka, Bangladesh
来源：
JOURNAL OF THEORETICAL AND APPLIED PHYSICS | 2018年 / 12卷 / 04期
关键词：
Silicon solar cell; Anti-reflection coating (ARC); Surface passivation; External quantum efficiency (EQE);
D O I：
10.1007/s40094-018-0313-0
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this work, the impact of six different anti-reflection coating (ARC) layers has been investigated using PC1D simulation software. Simulation shows that the range of 500-700nm would be suitable for designing an ARC. Designing a single-layer silicon nitride (Si3N4) ARC for 600nm wavelength and with a thickness of 74.257nm, a silicon solar cell with 20.35% efficiency has been simulated. Very closely followed by a 20.34% efficient silicon solar cell with 74.87 nm thick zinc oxide (ZnO) ARC layer. Significant increase in efficiency has been observed by applying ARC in respect to not applying any kind of ARC. After efficient solar cell modeling, optimum efficiency of 20.67% is being achieved by using SiO2 surface passivation and Si3N4 ARC layer. The effects on voltage, current, photovoltaic efficiency, reflectivity and external quantum efficiency due to ARCs are also represented in this work.
引用
收藏
页码：327 / 334
页数：8
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