A SIMS-XPS STUDY ON SILICON AND GERMANIUM UNDER O-2+ BOMBARDMENT

[1] SYSTEM FOR COMBINED SIMS-AES-XPS STUDIES OF SOLIDS [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1980, 51 (06) : 695 - 704

[2] OXYGEN-CHEMISORPTION AND OXIDE FORMATION ON SI(111) AND SI(100) SURFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02): : 640 - 645

[3] ELECTRON ORBITAL ENERGIES OF OXYGEN ADSORBED ON SILICON SURFACES AND OF SILICON DIOXIDE [J]. PHYSICAL REVIEW B, 1974, 10 (02): : 710 - 718

[4] THEORY OF SPUTTERING .I. SPUTTERING YIELD OF AMORPHOUS AND POLYCRYSTALLINE TARGETS [J]. PHYSICAL REVIEW, 1969, 184 (02): : 383 - +

[5] Strehlow W. H., 1973, Journal of Physical and Chemical Reference Data, V2, P163, DOI 10.1063/1.3253115

[6] THE EFFECT OF THE ANGLE OF INCIDENCE ON SECONDARY ION YIELDS OF OXYGEN-BOMBARDED SOLIDS [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 218 (1-3): : 307 - 311

[7] THE EFFECT OF WORK FUNCTION CHANGE ON THE SPUTTERING OF SI+ FROM OXIDIZED SI SURFACES [J]. PHYSICA SCRIPTA, 1983, T6 : 67 - 70

[8] THE ORIGIN OF OXIDATION INDUCED ENHANCEMENT OF SI+ SPUTTER YIELD IN SIMS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03): : 1316 - 1317

[9] DIRECT EVIDENCE OF ELECTRON-TUNNELING IN THE IONIZATION OF SPUTTERED ATOMS [J]. PHYSICAL REVIEW LETTERS, 1983, 50 (02) : 127 - 130

[10] Ziegler JF., 1985, The Stopping and Range of Ions in Matter, P93

[1] SYSTEM FOR COMBINED SIMS-AES-XPS STUDIES OF SOLIDS [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1980, 51 (06) : 695 - 704

[2] OXYGEN-CHEMISORPTION AND OXIDE FORMATION ON SI(111) AND SI(100) SURFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02): : 640 - 645

[3] ELECTRON ORBITAL ENERGIES OF OXYGEN ADSORBED ON SILICON SURFACES AND OF SILICON DIOXIDE [J]. PHYSICAL REVIEW B, 1974, 10 (02): : 710 - 718

[4] THEORY OF SPUTTERING .I. SPUTTERING YIELD OF AMORPHOUS AND POLYCRYSTALLINE TARGETS [J]. PHYSICAL REVIEW, 1969, 184 (02): : 383 - +

[5] Strehlow W. H., 1973, Journal of Physical and Chemical Reference Data, V2, P163, DOI 10.1063/1.3253115

[6] THE EFFECT OF THE ANGLE OF INCIDENCE ON SECONDARY ION YIELDS OF OXYGEN-BOMBARDED SOLIDS [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 218 (1-3): : 307 - 311

[7] THE EFFECT OF WORK FUNCTION CHANGE ON THE SPUTTERING OF SI+ FROM OXIDIZED SI SURFACES [J]. PHYSICA SCRIPTA, 1983, T6 : 67 - 70

[8] THE ORIGIN OF OXIDATION INDUCED ENHANCEMENT OF SI+ SPUTTER YIELD IN SIMS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03): : 1316 - 1317

[9] DIRECT EVIDENCE OF ELECTRON-TUNNELING IN THE IONIZATION OF SPUTTERED ATOMS [J]. PHYSICAL REVIEW LETTERS, 1983, 50 (02) : 127 - 130

[10] Ziegler JF., 1985, The Stopping and Range of Ions in Matter, P93