THEORETICAL C(V) EQUATION OF AN AMORPHOUS CRYSTALLINE HETEROJUNCTION AT LOW-FREQUENCY - COMMENTS

被引:2
|
作者
LIOU, JJ
机构
关键词
D O I
10.1016/0038-1101(88)90437-6
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1349 / 1350
页数:2
相关论文
共 50 条
  • [2] THEORETICAL C(V) EQUATION OF AN AMORPHOUS CRYSTALLINE HETEROJUNCTION AT LOW-FREQUENCY
    RUBINELLI, FA
    SOLID-STATE ELECTRONICS, 1987, 30 (06) : 593 - 599
  • [3] The low-frequency density of states for amorphous and crystalline ices
    C.A. Tulk
    D.D. Klug
    E.C. Svensson
    V.F. Sears
    J. Katsaras
    Applied Physics A, 2002, 74 : s1185 - s1187
  • [4] Low-frequency Vibrational Dynamics of Amorphous and Crystalline Silica
    Albers, Peter W.
    Michael, Guenther
    Rotgerink, Hans Lansink
    Reisinger, Martin
    Parker, Stewart F.
    ZEITSCHRIFT FUR NATURFORSCHUNG SECTION B-A JOURNAL OF CHEMICAL SCIENCES, 2012, 67 (10): : 1016 - 1020
  • [5] The low-frequency density of states for amorphous and crystalline ices
    Tulk, CA
    Klug, DD
    Svensson, EC
    Sears, VF
    Katsaras, J
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2002, 74 (Suppl 1): : S1185 - S1187
  • [6] C-V CURVES FOR AN AMORPHOUS CRYSTALLINE SILICON HETEROJUNCTION - CALCULATIONS AT THE STATIC LIMIT
    RUBINELLI, F
    ALBORNOZ, S
    BUITRAGO, R
    SOLID-STATE ELECTRONICS, 1989, 32 (07) : 547 - 554
  • [7] LOW-FREQUENCY VIBRATIONS OF CRYSTALLINE BIPHENYL
    KREBS, K
    ZERBI, G
    SANDRONI, S
    JOURNAL OF CHEMICAL PHYSICS, 1964, 40 (12): : 3502 - &
  • [8] LOW-FREQUENCY MODES IN AMORPHOUS ICE
    SVENSSON, EC
    MONTFROOIJ, W
    SEARS, VF
    KLUG, DD
    PHYSICA B, 1994, 194 : 409 - 410
  • [9] AMORPHOUS-CRYSTALLINE SILICON ISOTYPE HETEROJUNCTION - ELECTROSTATIC POTENTIAL DISTRIBUTION AND C(V) CURVES
    RUBINELLI, F
    ALBORNOZ, S
    BUITRAGO, R
    SOLID-STATE ELECTRONICS, 1985, 28 (08) : 741 - 750
  • [10] AMORPHOUS-CRYSTALLINE SILICON HETEROJUNCTION - THEORETICAL EVALUATION OF THE CURRENT TERMS
    RUBINELLI, F
    ALBORNOZ, S
    BUITRAGO, R
    SOLID-STATE ELECTRONICS, 1989, 32 (10) : 813 - 825