HETEROJUNCTION BIPOLAR-TRANSISTORS USING SI-GE ALLOYS

被引：309

作者：

IYER, SS

PATTON, GL

STORK, JMC

MEYERSON, BS

HARAME, DL

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,RES & DEV HIGH SPEED HETEROJUNCT DEVICE,YORKTOWN HTS,NY 10598

[2] IBM CORP,THOMAS J WATSON RES CTR,NEW MAT & STRUCT GRP,YORKTOWN HTS,NY 10598

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 10期

关键词：

D O I：

10.1109/16.40887

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2043 / 2064

页数：22

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