SB-INDUCED SURFACE-STATES ON (100) SURFACES OF III-V SEMICONDUCTORS

被引：33

作者：

LUDEKE, R ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

PHYSICAL REVIEW LETTERS | 1977年 / 39卷 / 16期

关键词：

D O I：

10.1103/PhysRevLett.39.1042

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1042 / 1045

页数：4

共 11 条

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[3]

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ANDERSON, J .

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[7] TOTAL VALENCE-BAND DENSITIES OF STATES OF III-V AND II-VI COMPOUNDS FROM X-RAY PHOTOEMISSION SPECTROSCOPY [J].

LEY, L ;

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SHIRLEY, DA .

PHYSICAL REVIEW B, 1974, 9 (02) :600-621

[8] ELECTRON ENERGY-LOSS SPECTROSCOPY OF GAAS AND GE SURFACES [J].

LUDEKE, R ;

ESAKI, L .

PHYSICAL REVIEW LETTERS, 1974, 33 (11) :653-656

[9] ELECTRONIC SURFACE STATES ON CLEAN AND OXYGEN-EXPOSED GAAS SURFACES [J].

LUDEKE, R ;

KOMA, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (01) :241-247

[10]

LUDEKE R, TO BE PUBLISHED

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