GALVANOMAGNETIC AND RECOMBINATION EFFECTS IN SEMICONDUCTORS IN A STRONG ELECTRIC-FIELD

被引：46
作者：
KACHLISHVILI, ZS [1 ]
机构：
[1] TBILISI STATE UNIV, TBILISI, GEORGIA
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1976年 / 33卷 / 01期
关键词：
D O I：
10.1002/pssa.2210330102
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：15 / 51
页数：37
相关论文
共 89 条
[1]  
ABULADZE LD, 1968, FIZ TVERD TELA+, V10, P1500
[2]  
[Anonymous], INTRO THEORY SEMICON
[3]  
[Anonymous], ZH EKSP TEOR FIZ
[4]   HOT-ELECTRON FARADAY EFFECT IN SEMICONDUCTORS [J].
ARORA, AK .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1968, 1 (04) :521-&
[5]  
ASRATYAN KK, 1974, FIZ TVERD TELA+, V16, P3497
[6]  
ASRATYAN KK, 1972, FIZ TEKH POLUPROV, V6, P744
[7]  
ASRATYAN KK, 1969, B ACAD SCI GEORG SSR, V53, P57
[8]  
ASRATYAN KK, 1973, FIZ TEKH POLUPROV, V7, P1620
[9]   MAXIMUM ANISOTROPY APPROXIMATION FOR CALCULATING ELECTRON DISTRIBUTIONS - APPLICATION TO HIGH FIELD TRANSPORT IN SEMICONDUCTORS [J].
BARAFF, GA .
PHYSICAL REVIEW, 1964, 133 (1A) :A26-A33
[10]   ANISOTROPIC ELECTRON DISTRIBUTION AND DC AND MICROWAVE AVALANCHE BREAKDOWN IN HYDROGEN [J].
BARAFF, GA ;
BUCHSBAUM, SJ .
PHYSICAL REVIEW, 1963, 130 (03) :1007-&
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