THE EFFECTS OF BARRIER HYDROGENATION IN NBN-BASED JOSEPHSON-JUNCTIONS

[11] THE EFFECTS OF METHANE IN THE DEPOSITION OF SUPERCONDUCTING NIOBIUM NITRIDE THIN-FILMS AT AMBIENT SUBSTRATE-TEMPERATURE [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (02) : 1013 - 1017

[12] NIOBIUM NITRIDE THIN-FILMS FOR USE IN JOSEPHSON-JUNCTIONS [J]. IEEE TRANSACTIONS ON MAGNETICS, 1985, 21 (02) : 505 - 508

[13] CUKAUSKAS EJ, 1987, IN PRESS IEEE T MAGN, V23

[14] PROPERTIES OF AMORPHOUS-GERMANIUM TUNNEL BARRIERS [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (04) : 1584 - 1596

[15] HIGH-QUALITY REFRACTORY JOSEPHSON TUNNEL-JUNCTIONS UTILIZING THIN ALUMINUM LAYERS [J]. APPLIED PHYSICS LETTERS, 1983, 42 (05) : 472 - 474

[16] NIOBIUM NITRIDE NIOBIUM JOSEPHSON TUNNEL-JUNCTIONS WITH SPUTTERED AMORPHOUS-SILICON BARRIERS [J]. APPLIED PHYSICS LETTERS, 1982, 40 (08) : 747 - 750

[17] SUPERCONDUCTING NBNXCY THIN-FILMS FABRICATED WITH A DUAL ION-BEAM SPUTTERING METHOD [J]. APPLIED PHYSICS LETTERS, 1986, 49 (07) : 416 - 418

[18] NIOBIUM NITRIDE JOSEPHSON TUNNEL-JUNCTIONS WITH MAGNESIUM-OXIDE BARRIERS [J]. APPLIED PHYSICS LETTERS, 1985, 46 (11) : 1098 - 1100

[19] GENERALIZED FORMULA FOR ELECTRIC TUNNEL EFFECT BETWEEN SIMILAR ELECTRODES SEPARATED BY A THIN INSULATING FILM [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (06) : 1793 - &

[20] ROOM-TEMPERATURE DEPOSITION OF SUPERCONDUCTING NBN FOR SUPERCONDUCTOR-INSULATOR-SUPERCONDUCTOR JUNCTIONS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03): : 528 - 531

[11] THE EFFECTS OF METHANE IN THE DEPOSITION OF SUPERCONDUCTING NIOBIUM NITRIDE THIN-FILMS AT AMBIENT SUBSTRATE-TEMPERATURE [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (02) : 1013 - 1017

[12] NIOBIUM NITRIDE THIN-FILMS FOR USE IN JOSEPHSON-JUNCTIONS [J]. IEEE TRANSACTIONS ON MAGNETICS, 1985, 21 (02) : 505 - 508

[13] CUKAUSKAS EJ, 1987, IN PRESS IEEE T MAGN, V23

[14] PROPERTIES OF AMORPHOUS-GERMANIUM TUNNEL BARRIERS [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (04) : 1584 - 1596

[15] HIGH-QUALITY REFRACTORY JOSEPHSON TUNNEL-JUNCTIONS UTILIZING THIN ALUMINUM LAYERS [J]. APPLIED PHYSICS LETTERS, 1983, 42 (05) : 472 - 474

[16] NIOBIUM NITRIDE NIOBIUM JOSEPHSON TUNNEL-JUNCTIONS WITH SPUTTERED AMORPHOUS-SILICON BARRIERS [J]. APPLIED PHYSICS LETTERS, 1982, 40 (08) : 747 - 750

[17] SUPERCONDUCTING NBNXCY THIN-FILMS FABRICATED WITH A DUAL ION-BEAM SPUTTERING METHOD [J]. APPLIED PHYSICS LETTERS, 1986, 49 (07) : 416 - 418

[18] NIOBIUM NITRIDE JOSEPHSON TUNNEL-JUNCTIONS WITH MAGNESIUM-OXIDE BARRIERS [J]. APPLIED PHYSICS LETTERS, 1985, 46 (11) : 1098 - 1100

[19] GENERALIZED FORMULA FOR ELECTRIC TUNNEL EFFECT BETWEEN SIMILAR ELECTRODES SEPARATED BY A THIN INSULATING FILM [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (06) : 1793 - &

[20] ROOM-TEMPERATURE DEPOSITION OF SUPERCONDUCTING NBN FOR SUPERCONDUCTOR-INSULATOR-SUPERCONDUCTOR JUNCTIONS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03): : 528 - 531